advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 80v single drive requirement r ds(on) 45m fast switching performance i d 21.3a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.0 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 41.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.33 continuous drain current, v gs @ 10v 13.4 pulsed drain current 1 80 gate-source voltage + 25 continuous drain current, v gs @ 10v 21.3 parameter rating drain-source voltage 80 1 AP9980GH/j rohs-compliant product 200810172 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. g d s the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9980gj) are available for low-profile applications. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 80 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.07 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 45 m ? v gs =4.5v, i d =8a - - 55 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =12a - 20 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =64v ,v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 25v - - + 100 na q g total gate charge 2 i d =12a - 18 30 nc q gs gate-source charge v ds =64v - 5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 11 - nc t d(on) turn-on delay time 2 v ds =40v - 11 - ns t r rise time i d =12a - 20 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 29 - ns t f fall time r d =3.3 -30- ns c iss input capacitance v gs =0v - 1810 2900 pf c oss output capacitance v ds =25v - 135 - pf c rss reverse transfer capacitance f=1.0mhz - 96 - pf r g gate resistance f=1.0mhz - 1.6 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =12a, v gs =0 v , - 57 - ns q rr reverse recovery charge di/dt=100a/s - 140 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9980GH/j
AP9980GH/j fig 1. typical output characteristics fig 2. typical output characteristics t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 60 0 3 6 9 12 15 18 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 50 0369121518 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 6.0v 5.0v 4.5v v g =3.0v 38 42 46 50 54 357911 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =8a t c =25 o c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics q rr fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9980GH/j t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =40v v ds =50v v ds =64v 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) 10us 100us 1ms 10ms 100ms dc t c =25 o c single pulse
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 laser marking symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9980gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence if last "s" is numerical letter : rohs product if last "s" is english letter : hf & rohs product logo meet rohs requirement for low voltage mosfet only e3 5
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.50 0.69 0.88 b2 0.60 0.87 1.14 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 5.20 5.35 5.50 e 6.70 7.00 7.30 e1 5.40 5.80 6.20 e ---- 2.30 ---- f 5.88 6.84 7.80 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-251 symbols advanced power electronics corp. millimeters 9980gj ywwsss part numbe r package code a c1 a1 c e d e1 e b1 b2 f d1 e date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement for low voltage mosfet only
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